Calculation of the properties of a MOS structure with a quasi-one-dimensional electron gasKOZYREV, S. V; OSIPOV, V. YU.Soviet physics. Technical physics. 1990, Vol 35, Num 10, pp 1154-1157, issn 0038-5662Article

On Flat-band voltage dependence on channel length in short-channel threshold modelHUANG, J. S. T; SCHRANKLER, J. W.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, issn 0018-9383, p. 1226Article

Shallow junction for 0.1 μm n-type metal-oxide semiconductor devicesWATTS, R. K; LUFTMAN, H. S; BAIOCCHI, F. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 515-523, issn 0734-211XConference Paper

Dual-transistor method to determine threshold-voltage shifts due to oxide-trapped charge and interface traps in metal-oxide-semiconductor devicesFLEETWOOD, D. M.Applied physics letters. 1989, Vol 55, Num 5, pp 466-468, issn 0003-6951, 3 p.Article

A new approach to verify and derive a transverse-field dependent mobility model for electrons in MOS inversion layersHYUNGSOON SHIN; TASCH, A. F; MAZIAR, C. M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1117-1124, issn 0018-9383, 8 p.Article

A pulsed interface-probing technique for MOS interface characterization at mid-gap levelsCILINGIROGLU, U.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2391-2396, issn 0018-9383Article

Metal/oxide/semiconductor interface investigated by monoenergetic positronsUEDONO, A; TANIGAWA, S; OHJI, Y et al.Physics letters. A. 1988, Vol 133, Num 1-2, pp 82-84, issn 0375-9601Article

Determination of the line edge roughness specification for 34 nm devicesLINTON, T; CHANDHOK, M; RICE, B. J et al.IEDm : international electron devices meeting. 2002, pp 303-306, isbn 0-7803-7462-2, 4 p.Conference Paper

On the piezoactivity of Si MOS structuresBURY, P; DURCEK, J; SAKALAUSKAS, K et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 2, pp K207-K209, issn 0031-8965Article

A time domain analysis of the charge pumping currentGHIBAUDO, G; SAKS, N. S.Journal of applied physics. 1988, Vol 64, Num 9, pp 4751-4754, issn 0021-8979Article

Dependence of breakdown voltage on molar concentration of 1,1,1, trichloroethane (TCA) in thermal SiO₂BHAN, R. K; BASU, P. K; CHHABRA, K. C et al.Microelectronics and reliability. 1989, Vol 29, Num 4, pp 537-541, issn 0026-2714, 5 p.Article

Thermal stresses in square-patterned GaAs/Si : a finite-element studyLINGUINIS, E. H; HAEGEL, N. M; KARAM, N. H et al.Applied physics letters. 1991, Vol 59, Num 26, pp 3428-3430, issn 0003-6951Article

Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devicesJENN-GWO HWU; JIN-BOR CHUANG; SHYH-LIANG FU et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 4, pp 377-383, issn 0721-7250Article

EPR and TSCR investigations of implanted Al-SiO₂-Si systems treated with RF plasma discharge = Etudes EPR et TSCR de systèmes d'ions implantés dans Al-SiO₂-Si traités par décharge RF (radio fréquence) de PlasmaLYSENKO, V. S; NAZAROV, A. N; VALIEV, S. A et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 653-665, issn 0031-8965Article

Roles of corners in matching of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 467-469, issn 0098-4094, 3 p.Article

Effects of high pressure on silicon metal-oxide-semiconductor structuresCRUMBAKER, T. E; SITES, J. R; SPAIN, I. L et al.Journal of applied physics. 1989, Vol 65, Num 6, pp 2328-2331, issn 0021-8979Article

Matching properties of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 465-467, issn 0098-4094, 3 p.Article

Influence of Ro radiation upon ion-implanted MOS structuresKASCHIEVA, S; DJAKOV, A.Radiation effects. 1986, Vol 87, Num 4, pp 185-189, issn 0033-7579Article

Surface-micromachined PbTiO₃ pyroelectric detectorsPOLLA, D. L; CHIAN-PING YE; TAMAGAWA, T et al.Applied physics letters. 1991, Vol 59, Num 27, pp 3539-3541, issn 0003-6951Article

Hot-carrier light emission from silicon metal-oxide-semiconductor devicesHERZOG, M; KOCH, F.Applied physics letters. 1988, Vol 53, Num 26, pp 2620-2622, issn 0003-6951Article

profiling of ultra-shallow complementary metal-oxide semiconductor junctions using spreading resistance : a comparison to secondary ion mass spectrometryOSBURN, C. M; BERKOWITZ, H. L; HEDDLESON, J. M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 533-539, issn 0734-211XConference Paper

Construction of a prototype MOS electrometerCOVER, K. S.Review of scientific instruments. 1989, Vol 60, Num 8, pp 2733-2739, issn 0034-6748Article

Prism-coupled light emission from tunnel junctions containing interface roughness: experimentWATANABE, J; TAKEUCHI, A; UEHARA, Y et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 18, pp 12959-12965, issn 0163-1829Article

Prism-coupled light emission from tunnel junctions containing interface roughness: theoryTAKEUCHI, A; WATANABE, J; UEHARA, Y et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 18, pp 12948-12958, issn 0163-1829, 11 p.Article

Si MOS photodetectors as detectors of hydrogenKOVALEVSKAYA, G. G; MEREDOV, M. M; RUSSU, E. V et al.Technical physics. 1993, Vol 38, Num 2, pp 149-151, issn 1063-7842Article